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HM62W1664HB Series
65536-word x 16-bit High Speed CMOS Static RAM
ADE-203-415A (Z) Rev. 1.0 Dec. 25, 1996 Description
The HM62W1664HB is an asynchronous high speed static RAM organized as 64-kword x 16-bit. It realize high speed access time (25/30 ns) with employing 0.8 m CMOS process and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The HM62W1664HB is packaged in 400-mil 44-pin SOJ for high density surface mounting.
Features
* Single 3.3 V supply (3.3 V 0.3V) * Access time: 25/30 ns (max) * Completely static memory No clock or timing strobe required * Equal access and cycle times * Directly LV-TTL compatible All inputs and outputs * 400-mil 44-pin SOJ package * Center VCC and VSS type pinout
Ordering Information
Type No. HM62W1664HBJP-25 HM62W1664HBJP-30 HM62W1664HBLJP-25 HM62W1664HBLJP-30 Access time 25 ns 30 ns 25 ns 30 ns Package 400-mil 44-pin plastic SOJ (CP-44D)
HM62W1664HB Series
Pin Arrangement
HM62W1664HBJP/HBLJP Series
A4 A3 A2 A1 A0 CS I/O1 I/O2 I/O3 I/O4 VCC VSS I/O5 I/O6 I/O7 I/O8 WE A15 A14 A13 A12 NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE UB LB I/O16 I/O15 I/O14 I/O13 VSS VCC I/O12 I/O11 I/O10 I/O9 NC A8 A9 A10 A11 NC
(Top View)
Pin Description
Pin name A0 - A15 I/O1 - I/O16 CS OE WE UB LB VCC VSS NC Function Address input Data input/output Chip select Output enable Write enable Upper byte select Lower byte select Power supply Ground No connection
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HM62W1664HB Series
Block Diagram
(LSB) A3 A2 A1 A0 A7 A6 A5 A4 VCC Row decoder Memory matrix 256 rows x 256 columns x 16 bit (1,048,576 bits) VSS
(MSB)
CS I/O1 . . . I/O8 I/O9 . . . I/O16 WE CS LB UB Column I/O Input data control Column decoder CS
(LSB) A12 A11 A10 A15 A14 A13 A9 A8 (MSB)
OE
CS
Function Table
CS H L L L L L L L L L Note: OE x H L L L L x x x x WE x H H H H H L L L L x: H or L LB x x L L H H L L H H UB x x L H L H L H L H Mode Standby Output disable Read VCC current I SB , I SB1 I CC I CC I/O1-I/O8 High-Z High-Z Output Output High-Z High-Z Input Input High-Z High-Z I/O9-I/O16 High-Z High-Z Output High-Z Output High-Z Input High-Z Input High-Z Ref. cycle -- -- Read cycle Read cycle Read cycle -- Write cycle Write cycle Write cycle --
Lower byte read I CC Upper byte read I CC -- Write I CC I CC
Lower byte write I CC Upper byte write I CC -- I CC
3
HM62W1664HB Series
Absolute Maximum Ratings
Parameter Supply voltage relative to VSS Voltage on any pin relative to V SS Power dissipation Operating temperature Storage temperature Storage temperature under bias Symbol VCC VT PT Topr Tstg Tbias Value -0.5 to +4.6 -0.5* to V CC + 0.5 1.0 0 to +70 -55 to +125 -10 to +85
1
Unit V V W C C C
Notes: 1. VT (min) = -2.5 V for pulse width (under shoot) 10 ns
Recommended DC Operating Conditions (Ta = 0 to +70C)
Parameter Supply voltage Symbol VCC* VSS * Input voltage VIH VIL
2 3
Min 3.0 0 2.0 -0.3*
1
Typ 3.3 0 -- --
Max 3.6 0 VCC + 0.3 0.8
Unit V V V V
Notes: 1. -2.0 V for pulse width (under shoot) 10 ns 2. The supply voltage with all V CC pins must be on the same level. 3. The supply voltage with all VSS pins must be on the same level.
4
HM62W1664HB Series
DC Characteristics (Ta = 0 to +70C, VCC = 3.3 V 0.3 V, VSS = 0 V)
Parameter Input leakage current Output leakage current* 1 Operating power supply current Symbol Min |ILI| |ILO | 25 ns cycle I CC 30 ns cycle I CC Standby power supply current 25 ns cycle I SB 30 ns cycle I SB I SB1 -- -- -- -- -- -- -- Typ*1 -- -- -- -- -- -- -- Max 2 2 100 90 40 35 1 mA VCC CS VCC - 0.2 V, (1) 0 V Vin 0.2 V or (2) VCC Vin VCC - 0.2 V mA CS = VIH, Other inputs = VIH/V IL Unit Test conditions A A mA Vin = VSS to V CC Vin = VSS to V CC CS = VIL, Iout = 0 mA Other inputs = VIH/V IL
--* 2 Output voltage VOL -- -- VOH Note:
--* 2 -- --
0.15*2 0.2 0.4 -- -- V V V V I OL = 0.1 mA I OL = 2 mA I OH = -0.1 mA I OH = -2 mA
VCC - 0.2 -- 2.4 --
1. Typical values are at VCC = 3.3 V, Ta = +25C and not guaranteed. 2. This characteristics is guaranteed only for L-version.
Capacitance (Ta = 25C, f = 1.0 MHz)
Parameter Input capacitance*
1 1
Symbol Cin CI/O
Min -- --
Typ -- --
Max 6 8
Unit pF pF
Test conditions Vin = 0 V VI/O = 0 V
Input/output capacitance* Note:
1. This parameter is sampled and not 100% tested.
5
HM62W1664HB Series
AC Characteristics (Ta = 0 to +70C, VCC = 3.3 V 0.3 V, unless otherwise noted.)
Test Conditions * * * * Input pulse levels: 2.4 V/0.4 V Input rise and fall time: 3 ns Input and output timing reference levels: 1.4 V Output load: See figures (Including scope and jig)
Dout 30 pF 500 1.4V Output load (A) Dout 5 pF 500
1.4V Output load (B) (for tCLZ, tOLZ, tLBLZ, tUBLZ, tCHZ, tOHZ, tLBHZ, tUBHZ, tWHZ, and tOW)
Read Cycle
HM62W1664HB -25 HM62W1664HB -30 Parameter Read cycle time Address access time Chip select access time Output enable to output valid Byte select to output valid Output hold from address change Chip select to output in low-Z Output enable to output in low-Z Byte select to output in low-Z Chip deselect to output in high-Z Output disable to output in high-Z Byte deselect to output in high-Z Symbol t RC t AA t ACS t OE t LB, t UB t OH t CLZ t OLZ t LBLZ, t UBLZ t CHZ t OHZ t LBHZ, t UBHZ Min 25 -- -- -- -- 5 5 1 1 -- -- -- Max -- 25 25 15 15 -- -- -- -- 12 12 12 Min 30 -- -- -- -- 5 5 1 1 -- -- -- Max -- 30 30 15 15 -- -- -- -- 12 12 12 Unit ns ns ns ns ns ns ns ns ns ns ns ns 1 1 1 1 1 1 Notes
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HM62W1664HB Series
Write Cycle
HM62W1664HB -25 HM62W1664HB -30 Parameter Write cycle time Address valid to end of write Chip select to end of write Write pulse width Byte select to end of write Address setup time Write recovery time Data to write time overlap Data hold from write time Write disable to output in low-Z Output disable to output in high-Z Write enable to output in high-Z Symbol t WC t AW t CW t WP t LBW, t UBW t AS t WR t DW t DH t OW t OHZ t WHZ Min 25 20 20 20 20 0 0 15 0 5 -- -- Max -- -- -- -- -- -- -- -- -- -- 12 12 Min 30 20 20 20 20 0 0 15 0 5 -- -- Max -- -- -- -- -- -- -- -- -- -- 12 12 Unit ns ns ns ns ns ns ns ns ns ns ns ns 1 1 1 8 7 9, 10 5 6 Notes
Notes: 1. Transition is measured 200 mV from steady voltage with Load (B). This parameter is sampled and not 100% tested. 2. If the CS or LB or UB low transition occurs simultaneously with the WE low transition or after the WE transition, output remains a high impedance state. 3. WE and/or CS must be high during address transition time. 4. If CS, OE, LB and UB are low during this period, I/O pins are in the output state. Then the data input signals of opposite phase to the outputs must not be applied to them. 5. t AS is measured from the latest address transition to the latest of CS, WE, LB or UB going low. 6. t WR is measured from the earliest of CS, WE, LB or UB going high to the first address transition. 7. A write occurs during the overlap of low CS, low WE and low LB or low UB. 8. t CW is measured from the later of CS going low to the end of write. 9. t LBW is measured from the later of LB going low to the end of write. 10. t UBW is measured from the later of UB going low to the end of write.
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HM62W1664HB Series
Timing Waveforms
Read Timing Waveform (1) (WE = VIH)
t RC Address tAA tACS CS tOE OE tLB LB tLBHZ 1 * tOHZ *1 tCHZ *1 Valid address
tUB UB tLBLZ *1 Dout (Lower byte) High Impedance *4 tUBLZ *1 tOLZ *1 tCLZ *1 High Impedance *4 Valid data
tUBHZ1 * *4 tOH
Dout (Upper byte)
Valid data
*4
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HM62W1664HB Series
Read Timing Waveform (2) (WE = VIH, LB = VIL , UB, = VIL)
tRC
Address
Valid address tAA tACS tOH tCHZ*1
CS tOE OE tOLZ*1 tCLZ *1 Dout (Lower/Upper byte) High Impedance *4 Valid data *4 tOHZ*1
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HM62W1664HB Series
Write Timing Waveform (1) (LB, UB Controlled)
tWC Address tAW tAS tWP WE*3 tCW CS*3 Valid address tWR
OE tLBW LB tUBW UB tWHZ tOHZ High impedance tOLZ tOW
Dout (Lower byte)
Dout (Upper byte)
High impedance tDW tDH Valid data tDW tDH Valid data
Din (Lower byte)
Din (Upper byte)
10
HM62W1664HB Series
Write Timing Waveform (2) (WE Controlled)
tWC Address tAW tAS WE*3 tCW CS*3 tWP Valid address tWR
OE tLBW LB, UB tWHZ tOHZ Dout (Lower/Upper byte) High impedance *2 tOLZ tOW tUBW
tDW
tDH Valid data
Din (Lower/Upper byte)
11
HM62W1664HB Series
Write Timing Waveform (3) (CS Controlled)
tWC Address Valid address tAW tAS tWP tWR
WE *3 tCW CS *3
OE tLBW LB, UB tWHZ tOHZ Dout (Lower/Upper byte) High impedance * *2
4
tUBW
tOLZ tOW
tDW
tDH Valid data
Din (Lower/Upper byte)
12
HM62W1664HB Series
Low VCC Data Retention Characteristics (Ta = 0 to +70C)
This characteristics is guaranteed only for L-version.
Parameter VCC for data retention Symbol VDR Min 2.0 Typ*1 Max -- -- Unit V Test conditions VCC CS VCC - 0.2 V, (1) 0 V Vin 0.2 V or (2) VCC Vin VCC - 0.2 V VCC = 3 V VCC CS VCC - 0.2 V, (1) 0 V Vin 0.2 V or (2) VCC Vin VCC - 0.2 V See retention waveform
Data retention current
I CCDR
--
2
80
A
Chip deselect to data retention time Operation recovery time Note:
t CDR tR
0 5
-- --
-- --
ns ms
1. Typical values are at VCC = 3.0 V, Ta = 25C, and not guaranteed.
Low V CC Data Retention Timing Waveform
t CDR V CC 3.0 V V DR 2.0 V CS 0V VCC CS VCC - 0.2 V Data retention mode tR
13
HM62W1664HB Series
Package Dimensions
HM62W1664HBJP/HBLJP Series (CP-44D) Unit: mm
28.33 28.90 Max 44 23 10.16 0.13 0.74 1.30 Max 3.50 0.26 1 22 11.18 0.13
0.80 +0.25 -0.17
0.43 0.10 0.41 0.08
1.27
9.40 0.25
Hitachi Code JEDEC Code EIAJ Code Weight CP-44D MO-061-AE -- 1.8 g
0.10
14
2.65 0.12
HM62W1664HB Series
When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207
Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00
Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322
Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071
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HM62W1664HB Series
Revision Record
Rev. 0.0 0.1 Date Aug. 3, 1995 Jul. 18, 1996 Contents of Modification Initial issue Change of format Change of Block Diagram Function Table Addition of Mode Parameter Recommended DC Operating Conditions Change of note 2. Addition of note 3. DC Characteristics Addition of note 2 AC Characteristics Change order of notes t OE (max) : 12/15 ns to 15/15 ns t AW (min) : 15/20 ns to 20/20 ns t CW (min) : 15/20 ns to 20/20 ns t WP (min) : 15/20 ns to 20/20 ns t LBW, t UBW (min) : 15/20 ns to 20/20 ns t DW (min) : 12/15 ns to 15/15 ns t WHZ (max) : 10/10 ns to 12/12 ns Adition of t OE (Write Cycle) Change of Timing Waveform Addition of Read Timing Waveform (2) Deletion of Preliminary Drawn by T. Nojiri Y. Saito Approved by K. Yoshizaki A. Ide
1.0
Dec. 25, 1996
16

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